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IXTP180N085T - Power MOSFET

Download the IXTP180N085T datasheet PDF. This datasheet also covers the IXTA180N085T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA180N085T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP180N085T N-Channel MOSFET INCHANGE
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IXTP182N055T N-Channel MOSFET INCHANGE
IXTP18N60PM N-Channel MOSFET INCHANGE
IXTP18N60PM Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTP180N055T (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
IXTP180N10T Power MOSFET
IXTP182N055T Power MOSFET
IXTP10N60PM PolarHV Power MOSFET
IXTP110N055P PolarHT Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA180N085T IXTP180N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 180 5.5 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.