Preliminary Technical Information TrenchMVTM Powe.
IXYS Corporation
IXTP180N085T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA180N085T IXTP180N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.
INCHANGE
IXTP180N085T - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTP180N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche vo.
