IXTP180N10T - Power MOSFET

This page provides the datasheet information for the IXTP180N10T, a member of the IXTA180N10T Power MOSFET family.

Features

z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density.

IXYS Corporation

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Datasheet Details

Part number	IXTP180N10T
Manufacturer	IXYS
File Size	149.16 KB
Description	Power MOSFET
Datasheet	IXTP180N10T Datasheet
Additional preview pages of the IXTP180N10T datasheet.

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Full PDF Text Transcription

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.

Published: Feb 13, 2015 |