TrenchMVTM Power MOSFET N-Channel Enhancement Mode.
INCHANGE
IXTP180N10T - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTP180N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche vol.
IXYS Corporation
IXTP180N10T - Power MOSFET
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Sy.
