IXTP180N10T Datasheet | Specifications & PDF Download

IXTP180N10T Power MOSFET

TrenchMVTM Power MOSFET N-Channel Enhancement Mode.

isc N-Channel MOSFET Transistor IXTP180N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche vol

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Sy

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