The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTP50N085T IXTY50N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 V 50 A 23 mΩ
TO-220 (IXTP)
GD S
D (TAB)
Symbol
VDSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient
TC = 25°C Package Current Limit, RMS
TO-252
TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 18 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
Mounting torque (TO-220)
85 85
± 20
50 25 130
10 250
3
V V
V
A A A
A mJ
V/ns
130 W
-55 ... +175 175
-55 ... +175
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.in.
IXTP50N085T Datasheet
