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Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTP50N085T IXTY50N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 V 50 A 23 mΩ
TO-220 (IXTP)
GD S
D (TAB)
Symbol
VDSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient
TC = 25°C Package Current Limit, RMS
TO-252
TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 18 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
Mounting torque (TO-220)
85 85
± 20
50 25 130
10 250
3
V V
V
A A A
A mJ
V/ns
130 W
-55 ... +175 175
-55 ... +175
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.in.
IXTP50N085T Datasheet
