IXTQ110N10P
IXTQ110N10P is N-Channel MOSFET manufactured by IXYS.
Advance Technical Information
TM .. PolarHT Power MOSFET
IXTQ 110N10P IXTT 110N10P
VDSS ID25
RDS(on)
= 100 = 110 = 15
V A mΩ
N-Channel Enhancement Mode
Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
Maximum Ratings 100 100 ± 20 V V V A A A A mJ J V/ns
TO-3P (IXTQ)
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
110 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150
(TAB)
TO-268 (IXTT)
S D = Drain TAB = Drain
W °C...
