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IXTQ160N075T - Power MOSFET

Download the IXTQ160N075T datasheet PDF. This datasheet also covers the IXTH160N075T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH160N075T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTQ160N075T N-ChannelMOSFET INCHANGE

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Full PDF Text Transcription for IXTQ160N075T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTQ160N075T. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH160N075T IXTQ160N075T VDSS = ID25 = RDS(on) ≤ 75 160 6.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.