Download the IXTQ160N075T datasheet PDF.
This datasheet also covers the IXTH160N075T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Advantages Easy to mount Space savings High power density.
Note: The manufacturer provides a single datasheet file (IXTH160N075T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IXTQ160N075T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTQ160N075T. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH160N075T IXTQ160N075T VDSS = ID25 = RDS(on) ≤ 75 160 6.0 V A mΩ S...
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IXTH160N075T IXTQ160N075T VDSS = ID25 = RDS(on) ≤ 75 160 6.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.