Preliminary Technical Information TrenchMVTM Powe.
IXYS Corporation
IXTQ160N075T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH160N075T IXTQ160N075T VDSS = ID25 = RDS(on.
INCHANGE
IXTQ160N075T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) ·Fast Switc.