Download the IXTT88N30P datasheet PDF.
This datasheet also covers the IXTH88N30P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
z z
1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-247 TO-264 TO-268
300
1.13/10 Nm/lb. in. 6 10 5 g g g
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5.
Full PDF Text Transcription for IXTT88N30P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTT88N30P. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTH 88N30P IXTT 88N30P RDS(on) VDSS = 300 ID25 = 88 = 40 mΩ V A Symbol VDSS ...
View more extracted text
N30P IXTT 88N30P RDS(on) VDSS = 300 ID25 = 88 = 40 mΩ V A Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 300 300 ± 20 V V V A A A A mJ J V/ns W °C °C °C °C TO-247 (IXTH) D (TAB) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 88 75 220 60 60 2.0 10 600 -55 ... +150 150 -55 ... +150 TO-268 (IXTT) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z 1.6 mm (0.062 in.
IXTT88N30P Datasheet
