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IXTT88N30P - Power MOSFET

This page provides the datasheet information for the IXTT88N30P, a member of the IXTH88N30P Power MOSFET family.

Features

  • z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-247 TO-264 TO-268 300 1.13/10 Nm/lb. in. 6 10 5 g g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5.

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www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTH 88N30P IXTT 88N30P RDS(on) VDSS = 300 ID25 = 88 = 40 mΩ V A Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 300 300 ± 20 V V V A A A A mJ J V/ns W °C °C °C °C TO-247 (IXTH) D (TAB) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 88 75 220 60 60 2.0 10 600 -55 ... +150 150 -55 ... +150 TO-268 (IXTT) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z 1.6 mm (0.062 in.
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