The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTV250N075T IXTV250N075TS
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 250 4.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force (PLUS220)
Maximum Ratings
75 75
± 20
250 75
560
40 1.5
V V
V
A A A
A J
3 V/ns
550
-55 ... +175 175
-55 ... +175
300 260
11...65 /2.5...15
3
W
°C °C °C
°C °C
N/lb.
IXTV250N075T Datasheet
