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Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTV250N075T IXTV250N075TS
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 250 4.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force (PLUS220)
Maximum Ratings
75 75
± 20
250 75
560
40 1.5
V V
V
A A A
A J
3 V/ns
550
-55 ... +175 175
-55 ... +175
300 260
11...65 /2.5...15
3
W
°C °C °C
°C °C
N/lb.
IXTV250N075T Datasheet
