IXZ12210N50L Datasheet | IXYS

RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & munications Applications Note: All data is per the IXZ1210N50L single ended device unless otherwise Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 = = 500 V 10 A Maximum Ratings 500 500 ±20 ±30 10 60 16 TBD 5 V V V V A A A m J V/ns 125V (operating) 175MHz >200 Per Device Total V/ns PDC PDHS PDAMB Rth JC Rth JHS .. Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C 180 150 360 300 10 W W W C/W C/W max. V Features 0.83 1.00 min. 0.42 0.50 typ. - IXYS RF Low Capacitance Z-MOSTM Process VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C 500 3.5 4.83 6.5 ±100 50 1 1.0 3.8 -55 +175 +175 -55 + 175 300 4 V n A µA m A Ω S °C °C °C °C g - Very low insertion inductance (<2n H) Advantages - High Performance RF Package - Easy to mount- no insulators...