IXZ210N50L Description
IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & munications Applications Note: All data is per the IXZ210N50L single ended device unless otherwise noted. Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.
IXZ210N50L Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power
- IXYS RF Low Capacitance Z-MOSTM
- Very low insertion inductance (<2nH)
- No beryllium oxide (BeO) or other
- High Performance RF Package
- Easy to mount-no insulators needed
- As measured under pulsed conditions (5 ms, 5%) with a gated Bias in Class AB, at P1dB