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IXZ2210N50L - N-Channel Linear 175MHz RF MOSFET

Download the IXZ2210N50L datasheet PDF. This datasheet also covers the IXZ210N50L variant, as both devices belong to the same n-channel linear 175mhz rf mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 150V (operating) 300 & 550 Watts 175MHz PDC PDHS PDAMB RthJC RthJHS www. DataSheet4U. com Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C 470 235 10 0.32 0.57 min. typ. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C 500 3.5 4.95 6.5 ±100 50 1 1.0 3.8 -55 +175 +175 -55 + 175 300 4 V nA µA mA Ω S °C °C °C °C g.
  • Isolated Substrate.
  • high isolation voltage (>2500V).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXZ210N50L_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications Note: All data is per the IXZ210N50L single ended device unless otherwise noted. Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 = = 500 V 10 A Maximum Ratings 500 500 ±20 ±30 10 60 16 TBD 5 >200 IXZ210N50L IXZ2210N50L V V V V A A A mJ V/ns V/ns 940 470 10 0.16 0.29 W W W C/W C/W max.