IXZ2210N50L Datasheet | IXYS

IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & munications Applications Note: All data is per the IXZ210N50L single ended device unless otherwise noted. Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 = = 500 V 10 A Maximum Ratings 500 500 ±20 ±30 10 60 16 TBD 5 >200 IXZ210N50L IXZ2210N50L V V V V A A A m J V/ns V/ns 940 470 10 0.16 0.29 W W W C/W C/W max. V Features 150V (operating) 300 & 550 Watts 175MHz PDC PDHS PDAMB Rth JC Rth JHS .. Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C 470 235 10 0.32 0.57 min. typ. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C 500 3.5 4.95 6.5 ±100 50 1 1.0 3.8 -55 +175 +175 -55 + 175 300 4 V n A µA m A Ω S °C °C °C °C g - Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability - IXYS RF Low Capacitance Z-MOSTM Process VGS = 20 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 50 V, ID = 0.5ID25, pulse test - Very low insertion inductance (<2n H) - No beryllium oxide (Be O) or other hazardous materials Advantages - High Performance RF...