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IXZ308N120 - Z-MOS RF Power MOSFET

Key Features

  • min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm(0.063 in) from case for 10 s VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C typ. max. V 6.5 ±100 50 1 V nA µA mA Ω S +175 °C °C + 175 °C °C g 1200 3.5.
  • Isolated Substrate.
  • high isolation voltage (>2500V).
  • excellent thermal transfer.
  • Increased temperature and power.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RF RF MOSFET MOSFET Lo Capacitance Low Capacitance Z-MOS Z-MOS MOSFET MOSFET Process Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, &E Broadcast Applications & Communications Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 RDS(on) PDC = = = = 1200 V 8.0 A 2.1 Ω 880 W Maximum Ratings 1200 1200 ±20 ±30 8 40 8 TBD V V V V A A A mJ 5 V/ns >200 V/ns DRAIN PDC PDHS PDAMB RthJC RthJHS www.DataSheet4U.