IXZ316N60 Datasheet | IXYS

Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 RDS(on) PDC = = = = 600 V 18.0 A 0.44 Ω 880 W Maximum Ratings 600 600 ±20 ±30 18 90 18 TBD V V V V A A A m J 5 V/ns >200 V/ns DRAIN PDC PDHS PDAMB Rth JC Rth JHS .. Tc = 25°C, Derate 4.4W/°C above 25°C Tc = 25°C 880 440 3.0 GATE 0.17 C/W 0.34 C/W Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. V 4.25 6.5 ±100 TJ = 25C TJ =125C SG1 SG2 SD1 SD2 Symbol Features VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 600 3.5 - Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and...