IXZ316N60 Overview
IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; Tc = 25°C, Derate 4.4W/°C above 25°C Tc = 25°C 880 440 3.0 W W W GATE 0.17 C/W 0.34 C/W Test Conditions Characteristic Values (TJ...
IXZ316N60 Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power
- cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS
- Optimized for RF and high speed
- Easy to mount-no insulators needed
- High power density