Overview: IXZ316N60
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 RDS(on) PDC = = = = 600 V 18.0 A 0.44 Ω 880 W Maximum Ratings 600 600 ±20 ±30 18 90 18 TBD V V V V A A A mJ 5 V/ns >200 V/ns
DRAIN PDC PDHS PDAMB RthJC RthJHS
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Tc = 25°C, Derate 4.4W/°C above 25°C Tc = 25°C 880 440 3.0 W W W GATE 0.17 C/W 0.34 C/W Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. V 4.25 6.
