IXZ316N60 Overview
Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power
- Optimized for RF and high speed
- Easy to mount-no insulators needed
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| TJ60S04M3L | Toshiba | MOSFETs |
| PDS4701 | Potens semiconductor | N+P Channel MOSFETs |
| QM3202S | UBIQ Semiconductor | Dual N-Ch 30V Fast Switching MOSFETs |