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L016 - High Power Diode Modules

Key Features

  • International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873 q q q q q I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDO 500 High Power Diode Modules IFRMS = 880 A IFAVM = 560 A VRRM = 1200-2200 V 3 2 VRSM VDSM V 1300 1500 1700 1900 2100 2300 Symbol IFRMS IFAVM IFSM VRRM VDRM V 1200 1400 1600 1800 2000 2200 Type 3 2 MDO 500-12N1 MDO 500-14N1 MDO 500-16N1 MDO 500-18N1 MDO 500-20N1 MDO 500-22N1 Maximum Ratings 880 560 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 15000 16000 13000 14400 1125000 1062000 845000 813000 -40...140 140 -40...