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MEE75-12DA - Fast Recovery Epitaxial Diode (FRED) Module

Features

  • International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ Tstg THmax Ptot VISOL Md dS dA a Weight Symbol IR Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 100 A; IF = 300 A; VT0 rT RthJH RthJC trr IRM VR = VRRM VR = 0.8.
  • VRRM VR = 0.8.
  • VRRM TVJ TVJ TVJ TV.

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Datasheet Details

Part number MEE75-12DA
Manufacturer IXYS Corporation
File Size 124.58 KB
Description Fast Recovery Epitaxial Diode (FRED) Module
Datasheet download datasheet MEE75-12DA Datasheet
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Full PDF Text Transcription

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Fast Recovery Epitaxial Diode (FRED) Module Preliminary data VRSM V 1200 www.DataSheet4U.com VRRM V 1200 Type MEA75-12 DA 1 2 3 MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA VRRM = 1200 V IFAV = 75 A trr = 250 ns TO-240 AA 1 3 2 MEK 75-12 DA 1 2 3 MEE 75-12 DA 1 2 3 Symbol IFRMS IFAV IFRM IFSM Test Conditions Tcase= 75 °C Tcase= 75 °C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 107 75 TBD 1200 1300 1080 1170 7200 7100 5800 5700 -40...+150 -40...+125 110 A A A A A A A A2s A2s A2s A2s °C °C °C W V~ V~ TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.
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