MEE75-12DA Datasheet | IXYS

Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ Tstg THmax Ptot VISOL Md d S d A a Weight Symbol IR Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 100 A; IF = 300 A; VT0 r T Rth JH Rth JC trr IRM VR = VRRM VR = 0.8 - VRRM VR = 0.8 - VRRM TVJ TVJ TVJ TVJ = 125°C = 25°C = 125°C = 25°C Tcase = 25°C 50/60 Hz, RMS t = 1 min t=1s IISOL ≤ 1 m A Mounting torque (M5) Terminal connection torque (M5) Creep distance on surface Strike distance through air Maximum allowable acceleration 280 3000 3600 Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders q q q q q 2.50-4/22-35 Nm/lb.in. 2.50-4/22-35 Nm/lb.in. 12.7 9.6 50 90 mm mm m/s2 g Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses q q q q Characteristic Values (per diode) typ. max. 2 0.5 34 1.85 2.17 2.58 2.64 1.48 3.65 0.550 0.450 TVJ = 100°C TVJ = 25°C TVJ = 100°C 250 300 22 33 m A m A m A V V V V V mΩ K/W K/W ns A A Dimensions in mm (1 mm = 0.0394") For power-loss calculations only DC current DC current IF = 150 A VR = 600 V -di/dt = 200 A/µs Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved D6 - 5 MEA 75-12 DA MEE 75-12 DA MEK 75-12 DA 200 A 175 IF 150 125 100 75 50 25 .. 0 0 1 V 2 VF 3 0 10 100 A/µs 1000 -di F/dt 0 0 200 400 µs 1000 600 A/ 800 -di F/dt 4 40 TVJ=125°C TVJ= 25°C TVJ= 100°C µC VR = 600V IF= 150A IF= 100A IF= 70A TVJ= 100°C A V = 600V R Qr IF= 150A IF= 100A IF= 70A Fig. 1 Forward current IF...