MUBW15-12A6 Overview
t = 10 ms sine 50 Hz TVJ = 125°C Maximum Ratings 1600 V 55 A 25 A 370 A 680 A²s +150 °C Symbol IR VF RthJC Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. TVJ = 25°C TVJ = 125°C IF = 55 A per die 20 µA 2 mA 1.2 1.46 V 1.05 °C/W.
MUBW15-12A6 Key Features
- NPT IGBT technology Square RBSOA, no latchup
- Free wheeling diodes with Hiperfast and soft recovery behaviour
- Isolation voltage 2500 V~
- Built in temperature sense
- High level of integration
- Direct Copper Bonded Al2O3 ceramic