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Advance Technical Information
HiPerRFTM Power MOSFET
F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH60N20F IXFT60N20F
VDSS ID25
RDS(on) trr
= = ≤ ≤
200V 60A 38mΩ 200ns
TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 60 240 60 1.5 10 320 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 4 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in.
60N20F Datasheet
