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80N60B - High Current IGBT

Key Features

  • ! International standard packages ! Very high current, fast switching IGBT ! Low V CE(sat) - for minimum on-state conduction losses ! MOS Gate turn-on - drive simplicity Test Conditions IC = 500 µA, VGE = 0 V IC = 8 mA, VCE = VGE VCE = VCES V =0V GE VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 V 4 8V TJ = 25°C T J = 125°C 200 µA 2 mA ±200 nA 2.5 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES = IC25 = =VCE(sat) 600 V 160 A 2.5 V Symbol V CES VCGR V CES VGEM I C25 IC90 I L(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions Maximum Ratings T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 600 V 600 V ±20 V ±30 V T C = 25°C TC = 90°C T C = 90°C TC = 25°C, 1 ms (silicon chip capability) (silicon chip capability) (silicon chip capability) VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C R G = 5 Ω, non-repetitive TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 160 80 75 300 ICM = 160 @ 0.8 V CES 10 A A A A A µs 500 W -55 .