80N60B Description
+150 °C °C °C 300 °C 0.4/6 Nm/lb.in. PLUS 247 TO-264 6g 10 g PLUS 247TM (IXSX) G C E TO-264 AA (IXSK) (TAB) G C E (TAB) G = Gate C = Collector E = Emitter TAB = Collector.
80N60B Key Features
- for minimum on-state conduction
- drive simplicity
80N60B Applications
- VCES, higher TJ or increased RG Inductive load, TJ =125°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.7 Ω Remarks: Switching times may increase for V (C