Datasheet4U.com

80N60B - High Current IGBT

Product Overview

IXYS

📥 Download Datasheet

80N60B High Current IGBT by IXYS - Datasheet Preview — Datasheet preview – 80N60B

Datasheet Details

Part number	80N60B
Manufacturer	IXYS
File Size	42.75 KB
Description	High Current IGBT
Datasheet	80N60B Datasheet
Additional preview pages of the 80N60B datasheet.

Product details

Features

! International standard packages ! Very high current, fast switching IGBT ! Low V CE(sat) - for minimum on-state conduction losses ! MOS Gate turn-on - drive simplicity Test Conditions IC = 500 µA, VGE = 0 V IC = 8 mA, VCE = VGE VCE = VCES V =0V GE VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 V 4 8V TJ = 25°C T J = 125°C 200 µA 2 mA ±200 nA 2.5 V.

📁 Similar Datasheet

80N60 - N-Channel MOSFET (Cmos)
80N60A - IGBT (IXYS Corporation)
80N02 - Power MOSFET (ON Semiconductor)
80N03 - MOSFET (GFD)
80N03L - SPB80N03L (Siemens)
80N03P - N-Channel 30V MOSFET (VBsemi)
80N055 - NP80N055 (NEC)
80N06 - N-Channel MOSFET (Inchange Semiconductor)

Other Datasheets by IXYS

80N10 - Power MOSFETs

Published: Dec 27, 2015 |