Download CPC3720C Datasheet PDF
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CPC3720C Description

The CPC3720 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications.

CPC3720C Key Features

  • Offers Low RDS(on) at Cold Temperatures
  • RDS(on) 22 max. at 25ºC
  • High Input Impedance
  • High Breakdown Voltage: 350VP
  • Low VGS(off) Voltage: -1.6 to -3.9V
  • Small Package Size SOT-89
  • Flammability Rating UL 94 V-0