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CPC3720CTR Datasheet N-Channel FET

Manufacturer: IXYS (now Littelfuse)

Overview: INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 350VP RDS(on) (max) 22 IDSS (min) 130mA Package.

Download the CPC3720CTR datasheet PDF. This datasheet also includes the CPC3720 variant, as both parts are published together in a single manufacturer document.

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General Description

The CPC3720 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.

The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications.

Key Features

  • Offers Low RDS(on) at Cold Temperatures.
  • RDS(on) 22 max. at 25ºC.
  • High Input Impedance.
  • High Breakdown Voltage: 350VP.
  • Low VGS(off) Voltage: -1.6 to -3.9V.
  • Small Package Size SOT-89.
  • Flammability Rating UL 94 V-0.

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