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DE150-101N09A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications
Symbol VDSS VDGR
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings
100
V
100
V
VDSS = 100 V
ID25
= 9.0 A
RDS(on) ≤ 0.16 Ω
PDC
= 200 W
VGS VGSM
Continuous Transient
±20
V
±30
V
ID25
Tc = 25°C
IDM
Tc = 25°C, pulse width limited by TJM
9.0
A
54
A
IAR
Tc = 25°C
14
A
EAR
Tc = 25°C
7.5 mJ
dv/dt
PDC PDHS
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
Tc = 25°C Derate 4.4W/°C above 25°C
5.5 V/ns
>200 V/ns
200
W GATE
80 W
DRAIN
PDAMB RthJC RthJHS
Tc = 25°C
3.5 W 0.74 C/W 1.
DE150-101N09A Datasheet
