Overview: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol VDSS VDGR Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 100 V 100 V VDSS = 100 V ID25 = 9.0 A RDS(on) ≤ 0.16 Ω PDC = 200 W VGS VGSM Continuous Transient ±20 V ±30 V ID25 Tc = 25°C IDM Tc = 25°C, pulse width limited by TJM 9.0 A 54 A IAR Tc = 25°C 14 A EAR Tc = 25°C 7.5 mJ dv/dt
PDC PDHS IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
Tc = 25°C Derate 4.4W/°C above 25°C 5.5 V/ns >200 V/ns 200 W GATE 80 W DRAIN PDAMB RthJC RthJHS Tc = 25°C 3.5 W 0.74 C/W 1.50 C/W Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified min. typ. max. VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C 100 V 2 2.8 V ±100 nA 25 µA 250 µA RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 0.16 Ω gfs VDS = 15 V, ID = 0.5ID25, pulse test 2.5 3.
