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DE150-501N04A RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
VDSS ID25
= 500 V = 4.5 A
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR
dv/dt
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
Maximum Ratings 500 V 500 V ±20 V ±30 V 4.5 A 27 A 4.5 A - mJ 3.5 V/ns
>200 V/ns
RDS(on) ≤
PDC
=
1.5 Ω 200W
PDC PDHS PDAMB RthJC RthJHS Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
gfs TJ TJM Tstg TL Weight
200 W
DRAIN
Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C
80
W GATE
3.5 W
0.74 C/W 1.
DE150-501N04A Datasheet
