DE150-501N04A Description
DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 = 500 V = 4.5 A Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous.
DE150-501N04A Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power
- IXYS advanced low Qg process
- Low gate charge and capacitances
- easier to drive
- faster switching
- Low RDS(on)
- Very low insertion inductance (<2nH)