Overview: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 = 500 V = 4.5 A Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR
dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Maximum Ratings 500 V 500 V ±20 V ±30 V 4.5 A 27 A 4.5 A - mJ 3.5 V/ns
>200 V/ns RDS(on) ≤ PDC = 1.5 Ω 200W PDC PDHS PDAMB RthJC RthJHS Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
gfs TJ TJM Tstg TL Weight 200 W DRAIN Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C 80 W GATE 3.5 W 0.74 C/W 1.50 C/W SG1 SG2 SD1 SD2 Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified min. typ. max. VGS = 0 V, ID = 3 ma 500 V VDS = VGS, ID = 250 µa 2.5 3.4 4V VGS = ±20 VDC, VDS = 0 ±100 nA VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C 25 µA 250 µA VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 1.2 1.5 Ω VDS = 60 V, ID = 0.5ID25, pulse test 1.
