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DSEA29-06AC - HiPerDynFRED Epitaxial Diode ISOPLUS220

Key Features

  • l TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA mounting force with clip typical 95 2500 1165 / 2.515 3 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DSEA 29-06AC DSEC 29-06AC www.DataSheet4U.com HiPerDynFREDTM Epitaxial Diode ISOPLUS220 TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM V 600 600 VRRM V 600 600 DSEA29-06AC DSEC 29-06AC Type 1 DSEC 2 3 DSEA IFAV = 2x15 A VRRM = 600 V trr = 35 ns ISOPLUS220TM E153432 12 1 2 3 3 Isolated back surface * Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 140°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 15 110 0.1 0.1 -55...+175 175 -55...+150 A A A mJ A °C °C °C W V~ N / lb g l l l l l l l Features l TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA mounting force with clip typical 95 2500 11...65 / 2.5...