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DSEI20 - Fast Recovery Epitaxial Diode

Key Features

  • q International standard package q Glass passivated chips q Very short recovery time q Extremely low losses at high switching frequencies q Low I -values RM q Soft recovery behaviour q Epoxy meets UL 94V-0.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
DSEI20-12A Fast Recovery Epitaxial Diode
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DSEI2x101-12A Fast Recovery Epitaxial Diode
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DSEI2x121 Fast Recovery Epitaxial Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Fast Recovery Epitaxial Diode (FRED) DSEI 20 IFAVM = 17 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type DSEI 20-12A TO-220 AC AC C A A = Anode, C = Cathode C Symbol IFRMS IFAVM ÿÿx IFRM IFSM I2t TVJ TVJM Tstg Ptot Md Weight Symbol IR VF VT0 rT RthJC RthJA trr IRM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TC = 25°C Mounting torque Maximum Ratings 70 17 220 130 140 110 120 85 80 60 60 -40...+150 150 -40...+150 78 0.4...0.