IXYS IRFP264
Standard Power MOSFET
MAXIMUM RATINGS
250 250 ±20 ±30 38 150 38 28 5 280 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = DrainFEATURES
l Mounting torque 1.13/10 Nm/lb.in. 6 300 g °C l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times ww w.D ata Sh eet 4U .co m Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 250 2 4 ±100 TJ = 25°C TJ = 125°C 25 250 0.075 V V nA µA µA ΩAPPLICATIONS
l VDSS VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8● VDSS VGS = 0 V l l l VGS(th) Switch-mode and resonant-mode power supplies Motor controld Uninterruptible Power Supplies (UPS) DC choppers IGSS IDSS Advantages l R DS(on) VGS = 10 V, ID = 23 A Pulse test, t ≤ 300 µs, duty cycle...