IX4351NE
IX4351NE is 9A Low Side SiC MOSFET/IGBT manufactured by IXYS.
INTEGRATED CIRCUITS DIVISION
Features
- Separate 9A peak source and sink outputs
- Operating Voltage Range: -10V to +25V
- Internal charge pump regulator for selectable negative gate drive bias
- Desaturation detection with soft shutdown sink driver
- TTL and CMOS patible input
- Under Voltage lockout (UVLO)
- Thermal shutdown
- Open drain FAULT output
Applications
- Driving SiC MOSFETs and IGBTs
- On-board charger and DC charging station
- Industrial inverters
- PFC, AC/DC and DC/DC converters
IX4351 Functional Block Diagram
IN 6 FAULT 5
Gate and Control Logic
VREG 8
4.6V Regulator
SET 9
Charge Pump Control
6.8V
4 DESAT
2 VDD 3 VDD
1 OUTSRC 16 OUTSNK
15 VSS 10...
