IXYS IX4351NE
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. The logic input, IN, is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. The IX4351NE is rated for an operational temperature range of -40°C to +125°C, and is available in a thermally enhanced 16-pin power SOIC package.| Part No. | IX4351NE |
|---|---|
| Datasheet | IX4351NE Download |
| Manufacturer |  IXYS |
| Description | 9A Low Side SiC MOSFET/IGBT |
| Buy | Stock & Price |
FEATURES
● Separate 9A peak source and sink outputs● Operating Voltage Range: -10V to +25V
● Internal charge pump regulator for selectable negative gate drive bias
● Desaturation detection with soft shutdown sink driver
● TTL and CMOS compatible input
● Under Voltage lockout (UVLO)
● Thermal shutdown
● Open drain FAULT output
APPLICATIONS
● Driving SiC MOSFETs and IGBTs● On-board charger and DC charging station
● Industrial inverters
● PFC, AC/DC and DC/DC converters IX4351 Functional Block Diagram IN 6 FAULT 5 Gate and Control Logic VREG 8 VDD 4.6V Regulator SET 9 Charge Pump Control VDD 6.8V 4 DESAT 2 VDD 3 VDD 1 OUTSRC 16 OUTSNK 15 VSS 10 VSS 14 OUTSOFT V SS 13 INSOFT 2.6V VDD 12 CAP 11 GND 7 COM IX4351NE 9A Low Side SiC MOSFET & IGBT Driver
DESCRIPTION
Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.
