IX4351NE Description
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.
IX4351NE Key Features
- Separate 9A peak source and sink outputs
- Operating Voltage Range: -10V to +25V
- Internal charge pump regulator for selectable
- Desaturation detection with soft shutdown sink driver
- TTL and CMOS patible input
- Under Voltage lockout (UVLO)
- Thermal shutdown
- Open drain FAULT output