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IXA12IF1200HB - XPT IGBT

Key Features

  • / Advantages:.
  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Full PDF Text Transcription for IXA12IF1200HB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXA12IF1200HB. For precise diagrams, and layout, please refer to the original PDF.

IXA12IF1200HB preliminary XPT IGBT Copack C (2) I C25 = = VCES VCE(sat)typ = 20 A 1200 V 1.8 V Part number IXA12IF1200HB (G) 1 E (3) Features / Advantages: ● Easy paralle...

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number IXA12IF1200HB (G) 1 E (3) Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.

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