IXA12IF1200HB - XPT IGBT

Features

/ Advantages:.
Easy paralleling due to the positive temperature coefficient of the on-state voltage.
Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic.
Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

IXA12IF1200HB XPT IGBT by IXYS - Datasheet Preview — Datasheet preview – IXA12IF1200HB

Datasheet Details

Part number	IXA12IF1200HB
Manufacturer	IXYS (now Littelfuse)
File Size	164.61 KB
Description	XPT IGBT
Datasheet	IXA12IF1200HB Datasheet
Additional preview pages of the IXA12IF1200HB datasheet.

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Full PDF Text Transcription

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IXA12IF1200HB preliminary XPT IGBT Copack C (2) I C25 = = VCES VCE(sat)typ = 20 A 1200 V 1.8 V Part number IXA12IF1200HB (G) 1 E (3) Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.

Published: Apr 19, 2011 |