IXA12IF1200HB Description
IXA12IF1200HB preliminary XPT IGBT Copack C (2) I C25 = = VCES VCE(sat)typ = 20 A 1200 V 1.8 V Part number IXA12IF1200HB (G) 1.
IXA12IF1200HB Key Features
- Easy paralleling due to the positive temperature coefficient of the on-state voltage
- short circuit rated for 10 µsec
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
- Thin wafer technology bined with the XPT design results in a petitive low VCE(sat)
- SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage