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IXA55I1200HJ - XPT IGBT

Key Features

  • / Advantages:.
  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).

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XPT IGBT Single IGBT Part number IXA55I1200HJ IXA55I1200HJ VCES I C25 VCE(sat) = = = preliminary 1200 V 84 A 1.8 V (G) 1 (C) 2 (E) 3 Backside: isolated Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.