IXA55I1200HJ Description
XPT IGBT Single IGBT Part number IXA55I1200HJ IXA55I1200HJ VCES I C25 VCE(sat) = = = preliminary 1200 V 84 A 1.8 V (G) 1 (C) 2 (E) 3 Backside:.
IXA55I1200HJ Key Features
- Easy paralleling due to the positive temperature coefficient of the on-state voltage
- short circuit rated for 10 µsec
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
- Thin wafer technology bined with the XPT design results in a petitive low VCE(sat)