IXBF9N160G Overview
High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ans tr td(off) tf Cies Q 70 A W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 5 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
IXBF9N160G Key Features
- High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs with significantly lower voltage drop
- MOSFET patible control 10 V turn on gate voltage
- fast switching for high frequency operation
- reverse conduction capability
- ISOPLUS i4-PACTM high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high voltage pins
- application friendly pinout
