IXBF9N160G Description
TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 1600 V ± 20 V 7A 4A 12 0.8·VCES 70 A W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. TVJ = 25°C TVJ = 125°C I = 0.5 mA;.
IXBF9N160G Key Features
- High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs with significantly lower voltage drop
- MOSFET patible control 10 V turn on gate voltage
- fast switching for high frequency operation
- reverse conduction capability
- ISOPLUS i4-PACTM high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high voltage pins
- application friendly pinout