IXYS IXBH16N170A
Bipolar MOS Transistor
| Part No. | IXBH16N170A |
|---|---|
| Datasheet | IXBH16N170A Download |
| Manufacturer |  IXYS |
| Description | Bipolar MOS Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
1700 1700 ±20 ±30 16 10 40 ICM = VCES = 40 1350 10 150 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A V ms W °C °C °C °C °C g g TO-268 (IXBT) G E TO-247 AD (IXBH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitter,FEATURES
● Monolithic fast reverse diode● High Blocking Voltage
● JEDEC TO-268 surface mount and JEDEC TO-247 AD packages
● Low switching losses
● High current handling capability
● MOS Gate turn-on - drive simplicity
● Molding epoxies meet UL 94 V-0 flammability classification Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 2.5 TJ = 125°C V V mA mA nA V V
APPLICATIONS
● AC motor speed control● Uninterruptible power supplies (UPS)
● Switched-mode and resonant-mode power...
