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Preliminary Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBH32N300 IXBT32N300
VCES = IC110 = VCE(sat) ≤
3000V 32A 3.2V
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268
Maximum Ratings
3000
V
3000
V
± 20
V
± 30
V
80
A
32
A
280
A
ICM = 80
A
VCES ≤ 2400
V
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
IXBH32N300 Datasheet
