Overview: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH32N300 IXBT32N300 VCES = IC110 = VCE(sat) ≤ 3000V 32A 3.2V Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 3000 V 3000 V ± 20 V ± 30 V 80 A 32 A 280 A ICM = 80 A VCES ≤ 2400 V 400 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g 4 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = 32A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 3000 V 2.5 5.0 V TJ = 125°C 50 μA 2 mA ±100 nA 2.8 3.2 V TJ = 125°C 3.
