Overview: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT32N300HV IXBH32N300HV VCES = IC110 = VCE(sat) 3000V 32A 3.2V Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 80 A 32 A 280 A VGE = 15V, TVJ = 125°C, RG = 10 ICM = 80 A Clamped Inductive Load VCES 2400 V TC = 25°C 400 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Torque (TO-247HV) 1.13/10 Nm/lb.in. TO-268HV TO-247HV 4 g 6 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = 32A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 3000 V 2.5 5.0 V TJ = 125°C 50 μA 2 mA ±100 nA 2.8 3.2 V TJ = 125°C 3.
