Datasheet Details
| Part number | IXBT16N170AHV |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 176.63 KB |
| Description | Bipolar MOS Transistor |
| Datasheet |
 IXBT16N170AHV Datasheet
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Download the IXBT16N170AHV datasheet PDF. This datasheet also includes the IXBA16N170AHV variant, as both parts are published together in a single manufacturer document.
| Part number | IXBT16N170AHV |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 176.63 KB |
| Description | Bipolar MOS Transistor |
| Datasheet |
IXBT16N170AHV Datasheet
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Advance Technical Information High Voltage, High Gain IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV Bipolar MOS Transistor VCES = IC25 = VCE(sat) 1700V 16A 6.0V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 1700 V 1700 V ± 20 V ± 30 V TC = 25°C TC = 90°C TC = 25°C, 1ms 16 A 10 A 40 A VGE = 15V, TVJ = 125°C, RG = 33 ICM = 40 A Clamped Inductive Load 1350 V VGE = 15V, VCE = 1200V, TJ = 125°C RG = 33, Non Repetitive 10 μs TC = 25°C 150 W -55 ...
+150 °C 150 °C -55 ...
+150 °C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263) 10..65 / 22..14.6 N/lb TO-263 TO-268 2.5 g 4.0 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = 10A, VGE = 15V, Note 1 Characteristic Values Min.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IXBT16N170A | Bipolar MOS Transistor | IXYS Corporation |
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