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IXBT16N170AHV - Bipolar MOS Transistor

This page provides the datasheet information for the IXBT16N170AHV, a member of the IXBA16N170AHV Bipolar MOS Transistor family.

Features

  • High Voltage Package.
  • High Blocking Voltage.
  • Anti-Parallel Diode.
  • Low Conduction Losses Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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Full PDF Text Transcription

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Advance Technical Information High Voltage, High Gain IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV Bipolar MOS Transistor VCES = IC25 = VCE(sat)  1700V 16A 6.0V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 1700 V 1700 V ± 20 V ± 30 V TC = 25°C TC = 90°C TC = 25°C, 1ms 16 A 10 A 40 A VGE = 15V, TVJ = 125°C, RG = 33 ICM = 40 A Clamped Inductive Load 1350 V VGE = 15V, VCE = 1200V, TJ = 125°C RG = 33, Non Repetitive 10 μs TC = 25°C 150 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263) 10..65 / 22.
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