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IXDH30N120 Datasheet High Voltage IGBT

Manufacturer: IXYS (now Littelfuse)

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Overview

IXDH 30N120 IXDH 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA VCES = 1200 V IC25 = 60 A V = CE(sat) typ 2.4 V C G C G E E IXDH 30N120 IXDH 30N120 D1 TO-247 AD (IXDH) G C E G = Gate, C = Collector , C (TAB) E = Emitter TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Md Weight Symbol V(BR)CES VGE(th) ICES I GES VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C; tp = 1 ms VGE = ±15 V; TJ = 125°C; RG = 47 Ω Clamped inductive load; L = 30 µH VGE = ±15 V; VCE = VCES; TJ = 125°C RG = 47 Ω, non repetitive TC = 25°C; IGBT Diode Mounting torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 60 A 38 A 76 A ICM = 50 A VCEK < VCES 10 µs 300 W 135 W -55 ...

+150 °C -40 ...

+150 °C 1.1/10 Nm/lb.in.

Key Features

  • NPT IGBT technology.
  • low saturation voltage.
  • low switching losses.
  • square RBSOA, no latch up.
  • high short circuit capability.
  • positive temperature coefficient for easy paralleling.
  • MOS input, voltage controlled.
  • optional ultra fast diode.
  • International standard packages Advantages.
  • Space savings.
  • High power density.
  • IXDT: surface mountable high power package Typical.

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