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IXDH30N120 - High Voltage IGBT

Features

  • NPT IGBT technology.
  • low saturation voltage.
  • low switching losses.
  • square RBSOA, no latch up.
  • high short circuit capability.
  • positive temperature coefficient for easy paralleling.
  • MOS input, voltage controlled.
  • optional ultra fast diode.
  • International standard packages Advantages.
  • Space savings.
  • High power density.
  • IXDT: surface mountable high power package Typical.

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Full PDF Text Transcription

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IXDH 30N120 IXDH 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA VCES = 1200 V IC25 = 60 A V = CE(sat) typ 2.
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