IXDH30N120D1 Description
RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C; RG = 47 Ω Clamped inductive load; TJ = 125°C RG = 47 Ω, non repetitive TC = 25°C;.
IXDH30N120D1 Key Features
- NPT IGBT technology
- low saturation voltage
- low switching losses
- square RBSOA, no latch up
- high short circuit capability
- MOS input, voltage controlled
- optional ultra fast diode
- International standard packages
- Space savings
- High power density