Overview: IXDN 55N120 D1 High Voltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA VCES = 1200 V IC25 = 100 A V =CE(sat) typ 2.3 V C miniBLOC, SOT-227 B E153432 E GG Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA
tSC (SCSOA) PC
VISOL TJ Tstg Md
Weight
Symbol
V(BR)CES VGE(th) I
CES
I
GES
VCE(sat) E Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ
Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms
VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C IGBT Diode 50/60 Hz; IISOL ≤ 1 mA Mounting torque Terminal connection torque (M4) Maximum Ratings 1200 1200 V V ±20 V ±30 V 100 A 62 A
124 A ICM = 100 VCEK < VCES
10 A µs 450 W 220 W 2500 V~ -40 ... +150 -40 ... +150 °C °C 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Conditions Characteristic Values
(T = 25°C, unless otherwise specified) J min. typ. max. VGE = 0 V IC = 2 mA, VCE = VGE V =V CE CES T = 25°C J
TJ = 125°C V = 0 V, V = ± 20 V CE GE IC = 55 A, VGE = 15 V 1200 V 4.5 6.5 V 3.8 mA 6 mA ± 500 nA 2.3 2.
