IXDN55N120D1 Description
+150 °C °C 1.5/13 Nm/lb.in. 30 g Conditions Characteristic Values (T = 25°C, unless otherwise specified) J min.
IXDN55N120D1 Key Features
- NPT IGBT technology
- low saturation voltage
- low switching losses
- square RBSOA, no latch up
- high short circuit capability
- MOS input, voltage controlled
- optional ultra fast diode
- International standard package
- Space savings
- Easy to mount with 2 screws