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IXDN55N120D1 - High Voltage IGBT

Key Features

  • NPT IGBT technology.
  • low saturation voltage.
  • low switching losses.
  • square RBSOA, no latch up.
  • high short circuit capability.
  • positive temperature coefficient for easy paralleling.
  • MOS input, voltage controlled.
  • optional ultra fast diode.
  • International standard package miniBLOC Advantages.
  • Space savings.
  • Easy to mount with 2 screws.
  • High power density Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IXDN 55N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA VCES = 1200 V IC25 = 100 A V =CE(sat) typ 2.3 V C miniBLOC, SOT-227 B E153432 E GG Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC VISOL TJ Tstg Md Weight Symbol V(BR)CES VGE(th) I CES I GES VCE(sat) E Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C IGBT Diode 50/60 Hz; IISOL ≤ 1 mA Mounting torque Terminal connection torque (M4) Maximum Ratings 1200 1200 V V ±20 V ±30 V 100 A 62 A 124 A ICM = 100 VCEK < VCES 10 A µs 450 W 220 W 2500 V~ -40 ..