Overview: NPT3 IGBT
in ISOPLUS247™ IXER 20N120 IXER 20N120D1 IC25 = 36 A VCES = 1200 V V = CE(sat)typ 2.4 V C C ISOPLUS247™ G G E
IXER 20N120 E
IXER 20N120D1 G C E
G = Gate
Isolated Backside
C = Collector E = Emitter IGBT
Symbol
VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA)
Ptot Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C VGE = ±15 V; RG = 68 W; TVJ = 125°C RBSOA Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 68 W TVJ = 125°C; non-repetitive TC = 25°C Maximum Ratings 1200 V ± 20 V 29 A 19 A 40 A VCES
10 µs 130 W Symbol
VCE(sat)
VGE(th) ICES
IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthCH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max. IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C VCE = 0 V; VGE = ± 20 V
Inductive load L = 100 µH; TVJ = 125°C VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 68 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 20 A
with heatsink pound 2.4 2.8 4.5
0.2
205 105 320 175 4.1 1.5 1.2 100
0.5 2.8 V V 6.5 V 0.2 mA mA 200 nA ns ns ns ns mJ mJ nF nC 0.
