• Part: IXER20N120D1
  • Manufacturer: IXYS
  • Size: 178.01 KB
Download IXER20N120D1 Datasheet PDF
IXER20N120D1 page 2
Page 2
IXER20N120D1 page 3
Page 3

IXER20N120D1 Description

TVJ = 125°C RBSOA Clamped inductive load; non-repetitive TC = 25°C Maximum Ratings 1200 V ± 20 V 29 A 19 A 40 A VCES 10 µs 130 W Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthCH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. TVJ = 25°C TVJ = 125°C IC = 0.6 mA;.

IXER20N120D1 Key Features

  • NPT3 IGBT
  • low saturation voltage
  • fast switching
  • short tail current for optimized
  • HiPerFRED™ diode
  • fast reverse recovery
  • low operating forward voltage
  • low leakage current
  • ISOPLUS247™ package
  • isolated back surface