Overview: PolarTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH170N10P IXFK170N10P VDSS = ID25 = RDS(on) ≤ trr ≤ 100V 170A 9mΩ 150ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque TO-247 TO-264 Maximum Ratings 100 V 100 V ± 20 V ± 30 V 170 A 160 A 350 A 60 A 2 J 10 V/ns 715 W -55 to +175 °C +175 °C -55 to +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g 10 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 VGS = 15V, ID = 350A Characteristic Values Min. Typ. Max. 100 V 2.5 5.
