PolarTM HiperFETTM Power MOSFET N-Channel Enhancem.
Inchange Semiconductor
IXFH170N10P - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor IXFH170N10P FEATURES ·Drain Current : ID= 170A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source .
IXYS
IXFH170N10P - Power MOSFET
PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH170N10P IXFK170N10P VDSS = ID25 = RDS(on) .
