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IXFH22N50P - PolarHV HiPerFET Power MOSFET

This page provides the datasheet information for the IXFH22N50P, a member of the IXFV22N50PS PolarHV HiPerFET Power MOSFET family.

Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 270 mΩ Advantages z z z Easy to mount Space savings High power density DS99358A(03/05) © 2005 IXYS All rights reserved IXFH 22N50P IXFV 22N50P IXFV www. DataSheet4U. com 22N50PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 20 3050 VGS =.

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Datasheet Details

Part number IXFH22N50P
Manufacturer IXYS
File Size 231.78 KB
Description PolarHV HiPerFET Power MOSFET
Datasheet download datasheet IXFH22N50P Datasheet
Additional preview pages of the IXFH22N50P datasheet.

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Full PDF Text Transcription

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Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH 22N50P IXFV 22N50P IXFV 22N50PS VDSS ID25 RDS(on) = 500 V = 22 A = 270 mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 500 500 ± 30 V V V A A A mJ mJ V/ns W °C °C °C °C °C TO-247 AD (IXFH) (TAB) TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C 22 66 22 30 750 10 350 -55 ... +150 150 -55 ... +150 PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV-PS) 1.6 mm (0.062 in.
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