IXFH22N55 Description
HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 300 V V V V A A A mJ V/ns W °C °C °C °C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain.
IXFH22N55 Key Features
- International standard packages JEDEC TO-247 AD
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance (< 5 nH)
- easy to drive and to protect
- Fast intrinsic Rectifier