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HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
IXFH 22 N55 VDSS
ID (cont) RDS(on) trr
= 550 V = 22 A = 0.27 W £ 250 ns
Maximum Ratings 550 550 ±20 ±30 22 88 22 30 5 300 -55 ... +150 150 -55 ...
IXFH22N55 Datasheet
