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IXFH32N100X - Power MOSFET

Download the IXFH32N100X datasheet PDF. This datasheet also covers the IXFT32N100XHV variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
  • ID25, Note 1 ©2019 IXYS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFT32N100XHV-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXFH30N60X N-Channel MOSFET INCHANGE
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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFH32N50 HiPerFET Power MOSFETs
IXFH32N50Q Power MOSFET
IXFH30N40Q Power MOSFET
IXFH30N50 HiPerFET Power MOSFETs
IXFH30N50 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information X-Class HiPerFETTM Power MOSFET IXFT32N100XHV IXFH32N100X IXFK32N100X VDSS = ID25 = RDS(on) 1000V 32A 220m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247 & TO-264P) TO-268HV TO-247 TO-264P Maximum Ratings 1000 1000 V V 30 V 40 V 32 A 64 A 16 A 2J 50 V/ns 890 W -55 ... +150 150 -55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 4g 6g 10 g TO-268HV (IXFT..