IXFH32N50 Description
+150 V V V D (TAB) A A A A A A J mJ V/ns W °C °C °C °C Nm/lb.in. g TO-268 (D3) Case Style G S G = Gate, S = Source, (TAB) D = Drain, TAB = Drain.
IXFH32N50 Key Features
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Diode