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IXFH36N60X3 - Power MOSFET

Key Features

  • International Standard Package.
  • Low R and Q DS(ON) G.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription for IXFH36N60X3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFH36N60X3. For precise diagrams, and layout, please refer to the original PDF.

X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFH36N60X3 D G S VDSS = ID25 =  RDS(on) 600V 36A 90m TO-247 (IXFH) Symbol VDSS V DGR V GSS ...

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ID25 =  RDS(on) 600V 36A 90m TO-247 (IXFH) Symbol VDSS V DGR V GSS VGSM ID25 IDM I A E AS dv/dt P D TJ T JM Tstg T L Md Weight Test Conditions TJ = 25C to 150C T J = 25C to 150C, R GS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM T C = 25C T C = 25C IS  IDM, VDD  VDSS, TJ  150°C T C = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque Maximum Ratings 600 V 600 V 20 V 30 V 36 A 48 A 8 A 750 mJ 50 V/ns 446 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 1.13 / 10 6 Nm/lb.

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