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PolarHT HiPerFET Power MOSFET
TM
IXFH69N30P IXFK69N30P
N-Channel Enhancement Mode Fast Intrinsic Diode
RDS(on) trr
VDSS ID25
= 300 V = 69 A = 49 mΩ ≤ 200 ns
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Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 300 300 ± 20 ± 30 69 200 69 50 1.5 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C
TO-247 (IXFH)
G
D (TAB) D S
TO-264 (IXFK)
G
D
D (TAB) S D = Drain TAB = Drain
G = Gate S = Source
Features
z z
1.6 mm (0.062 in.
IXFH69N30P Datasheet
