IXFH69N30P Description
PolarHT HiPerFET Power MOSFET TM IXFH69N30P IXFK69N30P N-Channel Enhancement Mode Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 300 V = 69 A = 49 mΩ ≤ 200 ns .. Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 (IXFH) G D (TAB) D S TO-264 (IXFK) G D D (TAB) S D = Drain TAB = Drain G...
IXFH69N30P Key Features
- easy to drive and to protect Fast intrinsic diode
- Gate 3
- Source 2
- Drain Tab