IXFH8N80 Description
+150 °C °C °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300 °C Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
IXFH8N80 Key Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier