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IXFK170N20P - Power MOSFET

Features

  • Dynamic dv/dt Rating.
  • Avalanche Rated.
  • Fast Intrinsic Diode.
  • Low QG.
  • Low R DS(on).
  • Low Drain-to-Tab Capacitance.
  • Low Package Inductance Advantages.
  • Easy to Mount.
  • Space Savings.

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PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK170N20P IXFX170N20P VDSS = ID25 =  RDS(on) 200V 170A 14m TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg L TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 200 V 200 V 20 V 30 V TC = 25C Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 170 A 160 A 400 A 85 A 4 J IS  IDM, VDD  VDSS, TJ  175C TC = 25C 20 1250 -55 ... +175 175 -55 ... +175 V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force (PLUS247) Mounting Torque (TO-264) 20..120/4.5..27 1.
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